Skip to Main Content
As CMOS devices are scaled to sub-100 nm region, dopant loss during silicide anneal becomes a critical issue. Reducing the thermal budget for silicide anneal is desirable to minimize the dopant loss from source/drain and polysilicon gate. With ternary silicide CoxNi1-xSi2, a relatively low anneal temperature can be used to achieve the disilicide phase with a comparable resistance value to CoSi2. In this report, the sheet resistance of CoxN1-xSi2 (x=1-0.5) at different anneal temperatures has been studied. The dopant redistribution and loss during CoxNi1-xSi2 formation were characterized by secondary ion mass spectrometry (SIMS). In addition, the phase structures of CoxNi1-xSi2 formed were also compared by X-ray diffraction (XRD). The results indicate that an optimal silicide process with low thermal budget can be achieved in ternary silicide CoxNi1-xSi2 structures to reduce dopant loss at source/drain junctions and poly gate, while keeping silicide resistance low.