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Improved HBT linearity with a "post-distortion"-type collector linearizer

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8 Author(s)
Yong-Joon Jeon ; Devices & Mater. Lab., LG Electron. Inst. of Technol., Seoul, South Korea ; Hyung-Wook Kim ; Min-Seok Kim ; Young-Sik Ahn
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An HBT amplifier with a "post-distortion"-type linearizer utilizing a base-collector junction diode shows more than 8-dB improvement of adjacent channel power ratio, and the collector linearizer comprising a reverse biased base-collector junction diode requires no additional dc power consumption and has no deterioration of RF performance. The linearization technique of post-distortion compensates the nonlinearity of HBTs, which arises from the C/sub bc/ variation due to a large-signal swing.

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:13 ,  Issue: 3 )