By Topic

Application of look-up table approach to high-K gate dielectric MOS transistor circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Kumar, D.V. ; Dept. of Electr. Eng., Indian Inst. of Technol., Mumbai, India ; Mohapatra, N.R. ; Patil, M.B. ; Rao, V.R.

In this paper, we study the circuit performance issues of high-K gate dielectric MOSFETs using the Look-up Table (LUT) approach. The LUT approach is implemented in a public-domain circuit simulator SEQUEL. We observed an excellent match between LUT simulator and mixed mode simulations using MEDICI. This work clearly demonstrates the predictive power of the new simulator, as it enables evaluation of circuits directly from device simulation results without going through model parameter extraction.

Published in:

VLSI Design, 2003. Proceedings. 16th International Conference on

Date of Conference:

4-8 Jan. 2003