Skip to Main Content
The design and fabrication of a 9-10GHz MIC three-stage GaAs FET amplifier module will be described. An output power of 1.6W with 20dB gain and 28% efficiency has been achieved.
Solid-State Circuits Conference. Digest of Technical Papers. 1978 IEEE International (Volume:XXI )
Date of Conference: 15-17 Feb. 1978