By Topic

Reliability evaluation of AlGaN/GaN HEMTs grown on SiC substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Lee, C. ; TriQuint Semicond. Texas, Richardson, TX, USA ; Witkowski, L. ; Muir, M. ; Tserng, H.Q.
more authors

AlGaN/GaN HEMTs have achieved record output power densities at microwave frequencies; however, reliability of these devices is still a major concern. In this paper, the results of DC and RF stress tests at several drain voltages of passivated 75 μm devices are discussed. After DC stress for 48 hours, negligible differences in IN and small signal performance were observed in some devices, while significant reduction in drain current, decrease in transconductance, and increase in on-resistance were measured in some other devices. RF stress for 40 hours has resulted in lower transconductance and drain current and degradation in power performance at 10 GHz. A comprehensive comparison of equivalent circuit models before and after stress is presented.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002