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High linearity, robust, AlGaN-GaN HEMTs for LNA and receiver ICs

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8 Author(s)

AlGaN-GaN HEMTs have not only been identified as the technology of choice for next generation high-power, high frequency applications but recently have also garnered interest for low noise receiver applications. In this paper, we discuss the noise figure and linearity of robust GaN HEMTs for LNA integrated circuits. GaN HEMTs with a low noise figure of 0.75 dB at X-band are presented. We believe this is the first comprehensive report combining all major requirements of a robust LNA-receiver technology: low noise figure, high linearity and high survivability.

Published in:

High Performance Devices, 2002. Proceedings. IEEE Lester Eastman Conference on

Date of Conference:

6-8 Aug. 2002

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