By Topic

High-Speed Si-Bipolar and GaAs Technologies

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
K. Worner ; TELEFUNKEN Electronic, Heilbronn, West Germany ; A. Colquhoun

Improvements in the design and fabrication of the basic transistor devices and improvements in circuit layout and design techniques have dramatically increased the performance of high-speed bipolar integrated circuits. Refinement of standard processes like lithography and the introduction of new processes such as low-pressure epitaxy and dry-etching techniques have largely contributed to the advancement of the device technology. GaAs int&égrated circuit technologies have rapidly developed over the last few years so that both analog and digital integrated circuits are now commercially available. These circuits all use the GaAs MESFET as the basic switching or modulating transistor. Integrated circuits based on more sophisticated heterostructure components, such as the heterojunction bipolar transistor or the modulation doped FET, are currently being developed. This paper will try to give an overview of present state of the art high-speed silicon bipolar technology and compare it to competing GaAs technologies. The most recent advances in oxide isolation technology which have led to the availability of 2.6 GHz dividers and the trend to self-aligned processes which can be used to achieve even smaller geometries will be described. On the GaAs side, the various GaAs-MESFET logic technologies and the heterojunction transistor technologies will be looked at regarding their present status and what can be expected in the near future. Most of the data will relate to monolithically integrated frequency dividers where a requirement for higher input frequencies combined with low power consumption exists.

Published in:

IEEE Journal on Selected Areas in Communications  (Volume:4 ,  Issue: 1 )