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High-Speed Time Switch Using GaAs LSI Technology

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2 Author(s)
Y. Shimazu ; NTT, Kanagawa-ken, Japan ; T. Takada

A high-speed time switch using GaAs LSI technology is discussed. A new high-speed time switch structure consisting primarily of shift registers is proposed. This structure requires relatively minimal hardware in designing LSI. As the first stage of study, a GaAs 4-channel time switch LSI is manufactured using this structure. Switching speed of the LSI is 2 Gbits/s and the power consumption 0.64 W/chip. Largecapacity switch configurations using this time switch are proposed. This high-speed time switch makes possible the time-division switching of such services as T.V. and high-definition T.V.

Published in:

IEEE Journal on Selected Areas in Communications  (Volume:4 ,  Issue: 1 )