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This paper surveys and compares several metallurgical structures and compositions used in the various reel-to-reel gang bonding processes now being implemented by high-volume semiconductor manufacturers. Various gang bonding techniques are reviewed briefly as background. Thermocompression (TC), hard solder, and soft solder inner lead bonding processes are compared, as well as TC, welding, and solder processes for outer lead bonding to lead frames or alumina-based networks. The characteristics, advantages and disadvantages of 1, 2, 3 layer interconnect metallizations, different bump structures, TC and solder bonding processes, and various carrier materials are discussed and compared.