By Topic

A Review of the Limitations of Aluminum Thin Films on Semiconductor Devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
E. Philofsky ; Motorola, Phoenix, AZ ; E. Hall

This paper reviews several time dependent reliability limitations of aluminum thin film metallization used on semiconductor devices., For each of the degradation modes, the present level of understanding as well as engineerlng data are presented. First, interactions of aluminum with the underlying silicon substrate, with silicon dioxide, and with gold are discussed. Then the time dependent degradation phenomena of electromigration, surface reconstruction, and corrosion are reviewed. A good understanding of all these limitations is important in the construction of reliable devices using this metallization.

Published in:

IEEE Transactions on Parts, Hybrids, and Packaging  (Volume:11 ,  Issue: 4 )