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Microwave Resistance of Gallium Arsenide and Silicon P-I-N Diodes

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2 Author(s)

The purpose of this paper is to demonstrate that the p-i-n diode resistance is definable as a function of frequency and depends on the diode geometry and electronic properties. A formula for the p-i-n diode resistance is presented and compared with experimental resistance versus frequency data for both silicon and gallium arsenide p-i-n diodes.

Published in:

Microwave Symposium Digest, 1987 IEEE MTT-S International  (Volume:2 )

Date of Conference:

May 9 1975-June 11 1987

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