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A GaAs Microwave MESFET with Extremely Low Distortion

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3 Author(s)

A ku-band GaAs power FET with extremely low signal distortion was fabricated on a material with graded doping profile, grown by a special vapor phase epitaxy technique. The device has a nearly constant gm over a wide range of the bias. At P/sub o/ = 18 dBm and P/sub sat/ = 24 dBm power levels of a 6 to 18 GHz broad band amplifier, this device demonstrates second harmonic levels as low as 40 dBc and 22 dBc , respectively, which is the lowest ever reported.

Published in:

Microwave Symposium Digest, 1987 IEEE MTT-S International  (Volume:2 )

Date of Conference:

May 9 1975-June 11 1987

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