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In-line process monitoring using surface charge analysis

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4 Author(s)
A. Resnick ; SemiTest Inc., Billerica, MA, USA ; E. Kamieniecki ; H. Phelps ; D. Jackson

The effect of pull temperature on oxide charge and interface trap density is explored using surface charge analysis (SCA). With this technique, lower pull temperatures were found to result in lower oxide charge and interface trap density levels. The impact of pull temperature on these parameters was found to exist even after a number of additional processing steps. SCA was used to evaluate the individual charge contribution of each step within a process sequence

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1990. ASMC 90 Proceedings. IEEE/SEMI 1990

Date of Conference:

11-12 Sep 1990