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CAD for silicon anisotropic etching

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2 Author(s)
Buser, R. ; Inst. of Microtechnol., Neuchatel Univ., Switzerland ; de Rooij, N.

A computer program that simulates silicon single crystal etching in KOH is proposed. Starting from a two-dimensional mask the program finds the relevant etching planes and delivers a projected three-dimensional output of the etched structure with the etchtime (etchdepth) as parameter. The program is discussed and sample results are shown

Published in:

Micro Electro Mechanical Systems, 1990. Proceedings, An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots. IEEE

Date of Conference:

11-14 Feb 1990