Referenced Items are not available for this document.
The results of reliability tests on a GaAs FET monolithic microwave integrated circuit (MMIC) switch are presented. Accelerated life tests were performed under both high-temperature reverse-biased (HTRB) and RF-biased conditions. The dominant failure mode observed is an increase in the switch insertion loss. A high reliability level is demonstrated; a mean-time to failure (MTTF) of 4*10/sup 7/ hours at a temperature of 125 degrees C is predicted from statistical analysis of the results. The failure mechanism identified is gate metal interdiffusion into GaAs, with a log-normal failure distribution and an activation energy of 1.34 eV.<
Published in:
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Date of Conference: 6-9 Nov. 1988
- Page(s):
- 57 - 60
- Meeting Date :
- 06 Nov 1988-09 Nov 1988
- INSPEC Accession Number:
- 3339241
- Conference Location :
- Nashville, Tennessee, USA
- Digital Object Identifier :
- 10.1109/GAAS.1988.11023
- Product Type:
- Conference Publications
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