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Novel GaAs FET modeling technique for MMICs

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2 Author(s)
Chen, T.-H. ; Microwave Semicond. Corp., Somerset, NJ, USA ; Kumar, M.

A novel procedure has been developed to extract an accurate and consistent small-signal equivalent circuit of an FET from the measured S-parameters. The parasitic circuit elements are pre-extracted from three to five sets of zero drain-to-source bias S-parameters measured at the desired gate-to-source and drain-to-source biases. In the second step, the S-parameters are fitted to the equivalent circuit of an FET in the common-source, common-drain, and common-gate configurations to improve the accuracy and consistency of the modeling. An excellent agreement between modeled and measured S-parameters, stability factor, and maximum stable (available) gain was obtained.<>

Published in:

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE

Date of Conference:

6-9 Nov. 1988