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2-D magnetic field sensor based on vertical Hall device

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3 Author(s)
L. Ristic ; Dept. of Electr. Eng., Alberta Univ., Edmonton, Alta., Canada ; M. Paranjape ; M. T. Doan

An analysis of a silicon structure fabricated in a 2- mu m CMOS process and based on a vertical Hall device is presented. The device consists of five current contacts and four Hall contacts. It has a linear response to a magnetic field on both channels. In the absence of the magnetic field, the currents of all four outside contacts are equal because of the device symmetry. Upon application of a magnetic field parallel to the chip surface and consisting of two components, B/sub x/ and B/sub y/, the currents of the outside contacts will change due to the action of the Lorentz force (deflection of carriers). The device is capable of simultaneous measurement of two components of magnetic field in the plane of the chip. The sensor exhibits a linear response to the magnetic field along both channels, yet does not show cross-sensitivity between the two channels.<>

Published in:

Solid-State Sensor and Actuator Workshop, 1990. 4th Technical Digest., IEEE

Date of Conference:

4-7 June 1990