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Browse Journals & Magazines > Electron Device Letters, IEEE ...> Volume:23 Issue:11 Help

Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"

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3 Author(s)
Youngmin Kim ; Texas Instruments ; Sridhar, S. ; Chatterjee, A.

In the above-named work, an incorrect version of Figs. 1 and 2 appeared. The corrected figures are presented.

Published in:
Electron Device Letters, IEEE  (Volume:23 ,  Issue: 11 )

Date of Publication: Nov. 2002

Page(s):
676
ISSN :
0741-3106
Digital Object Identifier :
10.1109/LED.2002.806972
Product Type:
Journals & Magazines
Date of Current Version :
16 December 2002
Issue Date :
Nov. 2002
Sponsored by :
IEEE Electron Devices Society

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