Referenced Items are not available for this document.
The ballistic MOSFET characteristics are compared in detail with those of the experimental 70-nm device at low temperatures reported by Sai-Halasz et al. (1987). The saturated region characteristics for V/sub G//spl les/0.8 V show good agreement and a proper consideration of higher subbands significantly improves agreement for V/sub G//spl ges/1.0 V. The discrepancy is large in the linear region due to carrier scattering. The carrier backscattering mechanism and the bias effect are discussed.
Published in:
Electron Device Letters, IEEE
(Volume:23
,
Issue:
11
)
Date of Publication: Nov. 2002
- Page(s):
- 655 - 657
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 7477386
- Digital Object Identifier :
- 10.1109/LED.2002.803765
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 16 December 2002
- Issue Date :
- Nov. 2002
- Sponsored by :
- IEEE Electron Devices Society
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