An electronically tuned, stable 8415 MHz dielectric resonator FET oscillator for space applications

A voltage-controlled 8415-MHz FET oscillator stabilized by a dielectric resonator is described. The oscillator provides over 3.2-MHz linear electronic tuning range with a flat power output equal to +1.8 dBm (27 degrees C, nominal), a single-sideband noise-to-carrier ratio of -68 dBc/Hz at 1 kHz off carrier, and a frequency-temperature coefficient of 0.54 parts per million/ degrees C over a -24 degrees C to 75 degrees C range. The oscillator withstood 150 Krads (Si) of gamma radiation with no significant performance degradation. The overall performance of the FET oscillator is far superior in many ways to that of an equivalent bipolar oscillator for space applications. For space applications, the FET dielectric resonator oscillator (DRO) is preferred over bipolar DRO because of its lower DC power consumption, better thermal frequency stability, linear electronic tunability. and higher RF output power capability.<
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