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EKV compact model extension for HV lateral DMOS transistors

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6 Author(s)
Hefyene, N. ; Ecole Polytech. Fed. de Lausanne, Switzerland ; Sallese, J.M. ; Anghel, C. ; Ionescu, A.M.
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This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.

Published in:

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Date of Conference:

14-16 Oct. 2002