By Topic

Theory of domain wall motion induced by microwave magnetic fields

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Schlomann, E. ; Research Division, Raytheon Company, Waltham, MA

A general theory is developed that applies to arbitrary polarization and takes account of damping and of the dipolar interaction between domains. The effect of the microwave field on the domain structure can be characterized by a pressure on the domain walls and by an alignment energy, both of which are proportional to the square of the rf magnetic field and become large in the vicinity of a resonance. For circular polarization the pressure tends to decrease the Larmor-domains (domains in which the imposed sense of polarization coincides with the sense of the natural spin precession) for frequencies outside the resonance region. Inside the resonance region, however, the pressure tends to increase the Larmor-domains. A linearly polarized field also exerts a pressure on the domain walls, with the polarity dependent upon the orientation of the field to the wall normal. In a linearly polarized magnetic field the domain walls tend to become aligned parallel to the rf field at frequencies ω near the low-frequency resonance (ω =γHa, γ = gyromagnetic ratio, Ha= anisotropy field) and perpendicular to the rf field at frequencies near the high-frequency resonance (ω = γ[Ha(Ha+ 4πM0)]1/2, M0= saturation magnetization).

Published in:

Magnetics, IEEE Transactions on  (Volume:11 ,  Issue: 4 )