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A low power fully integrated bandpass operational amplifier for biomedical neural recording applications

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2 Author(s)
P. Mohseni ; Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA ; K. Najafi

This paper presents a low power fully integrated bandpass amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides stable AC gain of 39.5 dB at 1 kHz. A PMOS input transistor, biased near the sub-threshold region acting as a high value resistor in the range of hundreds of mega ohms, is utilized to clamp the large and random DC open circuit potential that normally exists at the electrode-electrolyte interface. The 3 dB bandwidth of the amplifier is measured to be 26 Hz - 6.5 kHz and the tolerable DC input range is measured to be at least 1 V. The amplifier measures 0.107 mm2 in die area and dissipates 133 μW from a 3 V power supply. It is fabricated in MOSIS AMI 1.5 μm double poly double metal n-well CMOS process. Bench tests show complete functionality of the amplifier in both light and dark conditions and for a wide range of recording electrode capacitance.

Published in:

Engineering in Medicine and Biology, 2002. 24th Annual Conference and the Annual Fall Meeting of the Biomedical Engineering Society EMBS/BMES Conference, 2002. Proceedings of the Second Joint  (Volume:3 )

Date of Conference:

23-26 Oct. 2002