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Simulation-oriented noise model for MOS devices

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3 Author(s)

A formula for the noise in MOS devices particularly suited to general-purpose circuit simulation programs is described. It is valid in every part of the MOS I-V curves. The expression for the thermal noise is derived from a theoretical analysis, and the flicker-noise expression is empiric.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:22 ,  Issue: 6 )