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Wide-band, low-noise, matched-impedance amplifiers in submicrometer MOS technology

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5 Author(s)

Circuit design techniques for realizing wideband, low-noise, matched-impedance amplifiers in submicrometer MOS technology are discussed. A circuit configuration with two feedback loops has been fabricated in an experimental 1-μm NMOS technology. The fabricated amplifier has an insertion gain of 16.35 dB, a -3-dB bandwidth of 758 MHz, a maximum input voltage standing-wave ratio (VSWR) of 2.45, a maximum output VSWR of 1.60, and an average noise figure of 6.7 dB (with reference to a 50-μm source resistance) from 10 to 758 MHz.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:22 ,  Issue: 6 )