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Browse Journals & Magazines > Solid-State Circuits, IEEE Jo ...> Volume:20 Issue:4 Help

Behavior of analog MOS integrated circuits at high temperatures

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4 Author(s)
Hosticka, Bedrich J. ; Dalsass, K.-G. ; Krey, D. ; Zimmer, G.

Thermal effects on small-signal characteristics of MOS transistors are studied and parameters of MOS amplifiers operating at high temperatures are calculated. The predicted performance has been experimentally verified and high-temperature measurements of an operational amplifier and a switched-capacitor precision amplifier are presented.

Published in:
Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 4 )

Date of Publication: Aug 1985

Page(s):
871 - 874
ISSN :
0018-9200
Digital Object Identifier :
10.1109/JSSC.1985.1052402
Product Type:
Journals & Magazines
Date of Current Version :
06 January 2003
Issue Date :
Aug 1985
Sponsored by :
IEEE Solid-State Circuits Society

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