Cart (Loading....) | Create Account
Close category search window
 

Stochastic geometry effects in MOS transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)

The influence of random edge effects and oxide thickness variations on MOS transistor characteristics is investigated. The variance of the drain current is calculated as a function of the parameters of the stochastic geometry effects. Finally, the relation with the scaling down of the transistor dimensions is also included.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 4 )

Date of Publication:

Aug 1985

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.