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Harmonic performance of single-channel MOS integrated circuits

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1 Author(s)

Using simple square-law models for both the MOSFET current-voltage characteristics and the relationship between the threshold voltage and the source-to-substrate voltage, simple expressions are presented for predicting the performance of the basic MOSFET circuits used in analog MOS technology. Using these expressions, the low-frequency gain and the second and third harmonic distortion performance of the enhancement-load inverters, enhancement-load source follower, depletion-load inverter, and depletion-load source follower can be easily predicted by hand calculations. The results obtained by using these expressions are compared with previously published measurements and calculations.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:20 ,  Issue: 4 )

Date of Publication:

Aug 1985

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