By Topic

A simple technique for improving lateral p-n-p transistor performance

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

Outlines a simple and elegant method that would simultaneously increase the current gain, frequency response, and voltage capability of the lateral p-n-p transistor. This is accomplished by introducing aluminium in the collector regions of the device.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:17 ,  Issue: 4 )