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An NMOS comparator for a bubble memory

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2 Author(s)

A low-noise low-offset comparator was designed for a bubble memory system. The measured noise performance was 25 /spl mu/V rms or 13 nV//spl radic/Hz and the worst case offset voltage was determined to be 158 /spl mu/V. This results in a 1.30 mV comparator gray region.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:16 ,  Issue: 6 )