By Topic

Measurement of the temperature dependence of the I/SUB C/(V/SUB be/) characteristics of integrated bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

The temperature dependence of the I/SUB C/(V/SUB be/) relationship of bipolar transistors can be characterized by two parameters η and V/SUB go/. The authors discuss a new method for the determination of these parameters. With this method there is no need for accurate temperature measurements. It is shown that the results fit very well with bandgap-reference temperature characteristics. An analytical method for the calculation of V/SUB g0/ and η from values of the base emitter voltage or the bandgap reference voltage at different temperatures is presented.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:15 ,  Issue: 2 )