By Topic

Three-terminal CID as random access memory cell

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)

A method for electrical write-in via punchthrough is described, with which CIDs can be operated as memories. The principle has been successfully proven on a 3T-CID RAM. Estimated values achievable with an optimized device are presented.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:12 ,  Issue: 5 )