By Topic

Distortion in bipolar transistor variable-gain amplifiers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)

Wide-band variable-gain amplifiers consisting of bipolar junction transistors and exhibiting maximum gain larger than unity are considered. The mechanisms of distortion are analyzed at low and high frequencies. Approximate expressions for distortion are derived and give good agreement with computational results and measurements. The most common high-performance variable-gain circuit realizations are discussed and compared for distortion performance.

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:8 ,  Issue: 4 )