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Analysis of piezoresistance in p-type silicon for mechanical sensors

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2 Author(s)
Toriyama, Toshiyuki ; New Energy & Ind. Technol. Dev. Organ., Tokyo, Japan ; Sugiyama, S.

Typical p-type silicon mechanical sensors are designed to operate under temperature range from ∼173 K to ∼373 K and subjected to stress less than ∼100 MPa. The operation range is mainly restricted by the electrical and mechanical properties of silicon. The authors derived an approximate piezoresistance equation valid for typical operation range of the p-type silicon mechanical sensors, from valence band model of Bir and Pikus taking into account the spin-orbit interaction. The piezoresistance in p-type silicon was analyzed based on hole transfer and conduction mass shift due to stress. These mechanisms were introduced by Suzuki et al. [1984] to interpret piezoresistance in p-type silicon, based on the valence band equation in the vicinity of k=0. Under the typical operation range for p-type silicon mechanical sensors, holes are located where the value of k is relatively large, i.e., off k=0 and degenerate band split due to stress is incomplete. The hole behavior in the valence band was compatible with the typical operation range for p-type silicon mechanical sensors.

Published in:

Microelectromechanical Systems, Journal of  (Volume:11 ,  Issue: 5 )