Referenced Items are not available for this document.
The gate voltage oscillations in IGBT modules under short circuit conditions were investigated. In IGBT modules containing two chips in parallel, the amplitudes of the gate voltage oscillations were considerably larger than those in modules with single chip configurations. To investigate the gate voltage oscillations, a small signal analysis was performed on parallel circuits containing two IGBT chips. The gate voltage oscillations in parallel chips configurations could be described by a feedback amplifier model. The results of this analysis showed that a high resistive impedance between the gates of the two chips in parallel and a low inductance between their emitters were effective in suppressing the gate voltage oscillations. These effects were confirmed by experiments
Published in:
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual
(Volume:4
)
Date of Conference: 2002
- Page(s):
- 1758 - 1763
- Meeting Date :
- 23 Jun 2002-27 Jun 2002
- Print ISBN:
- 0-7803-7262-X
- INSPEC Accession Number:
- 7440109
- Conference Location :
- Cairns, Qld.
- Digital Object Identifier :
- 10.1109/PSEC.2002.1023065
- Product Type:
- Conference Publications
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