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A 1 K×1 K high dynamic range CMOS image sensor with on-chip programmable region-of-interest readout

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6 Author(s)
O. Schrey ; Fraunhofer-Inst. of Microelectron. Circuits & Syst., Duisburg, Germany ; J. Huppertz ; G. Filimonovic ; A. Bussmann
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An integrated 1024×1024 CMOS image sensor with programmable region-of-interest (ROI) readout and multiexposure technique has been developed and successfully tested. Size and position of the ROI is programmed based on multiples of a minimum readout kernel of 32×32 pixels. Since the dynamic range of the irradiance normally exceeds the electrical dynamic range of the imager that can be covered using a single integration time, a multiexposure technique has been implemented in the imager. Subsequent sensor images are acquired using different integration times and recomputed to form a single composite image. A newly developed algorithm performing the recomputation is presented. The chip has been realized in a 0.5-μm n-well standard CMOS process. The pixel pitch is 10 μm2 and the total chip area is 164 mm 2

Published in:

IEEE Journal of Solid-State Circuits  (Volume:37 ,  Issue: 7 )