By Topic

Constant-charge-injection programming for 10-MB/s multilevel AG-AND flash memories

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kurata, H. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Saeki, S. ; Kobayashi, T. ; Sasago, Y.
more authors

The demand for high-density, high-speed programming in flash memories has been increasing because their expanding applications in portable equipment such as digital still cameras and music players. A multilevel technique is one of the most effective approaches for improving memory density. But long cell programming time and precise control of the memory cell's threshold voltage (Vth) degrade its programming performance. To realize fast cell programming, we have developed a so-called assist-gate (AG)-AND-type flash cell, in which programming is performed by source side channel hot electron injection (SSI). In this paper, we developed a constant-charge-injection programming, which realizes fast precise control of Vth by suppressing the characteristic deviation. By utilizing proposed scheme, we achieved. 10.3-MB/s programming throughput in multilevel AG-AND flash memories.

Published in:

VLSI Circuits Digest of Technical Papers, 2002. Symposium on

Date of Conference:

13-15 June 2002