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InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

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3 Author(s)
Bove, Philippe ; Picogiga, Parc De Villejust, France ; Lahrche, H. ; Langer, R.

We report results on InP/GaAsSb and (Ga,Al)InAs/GaAsSb DHBT large area devices grown by MBE in a production environment and on a 4 inch multiwafer machine. All sources are solid including that of phosphorus and antimony, except the carbon gaseous source which is CBr4. Preliminary DC characteristics obtained with a base thickness of 50 nm doped at 3.5×1019 atom.cm-3 giving a base resistance of 800 Ω/sq, shows a current gain 134 measured at 1 kA/cm2, which is to our knowledge the record to date in this system. It is also shown that the p-type doping concentration of the GaAsSb base can easily be reached at the level as high as 2×1020 atom.cm-3 while mobility remains at 27 cm2 v-1 sec-1. These results show that the antimony-based compounds can easily be transferred into production.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002

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