InP/GaAsSb and (Al,Ga)InAs/GaAsSb DHBT material grown in a 4 inches multiwafer MBE machine

We report results on InP/GaAsSb and (Ga,Al)InAs/GaAsSb DHBT large area devices grown by MBE in a production environment and on a 4 inch multiwafer machine. All sources are solid including that of phosphorus and antimony, except the carbon gaseous source which is CBr/sub 4/. Preliminary DC characteristics obtained with a base thickness of 50 nm doped at 3.5/spl times/10/sup 19/ atom.cm/sup -3/ giving a base resistance of 800 /spl Omega//sq, shows a current gain 134 measured at 1 kA/cm/sup 2/, which is to our knowledge the record to date in this system. It is also shown that the p-type doping concentration of the GaAsSb base can easily be reached at the level as high as 2/spl times/10/sup 20/ atom.cm/sup -3/ while mobility remains at 27 cm/sup 2/ v/sup -1/ sec/sup -1/. These results show that the antimony-based compounds can easily be transferred into production.