By Topic

Optical investigations on InP and GaInP quantum dots

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Jetter, M. ; 4 Phys. Inst., Stuttgart Univ., Germany ; Beirne, G. ; Rossi, M. ; Porsche, J.
more authors

We present power and temperature dependent photoluminescence measurements of InP and GaInP self assembled quantum dots. In order to investigate the recombination mechanisms in these dots, time resolved measurements were performed. To examine the properties of a single quantum dot we have structured the samples with mesas of different sizes, to reduce the amount of optically active dots. The PL results of these experiments are also reported here.

Published in:

Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th

Date of Conference:

2002