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Nonlinear and transient microwave and RF modeling of the PIN diode

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2 Author(s)
Caverly, R.H. ; Dept. of Electr. & Comput. Eng., Southeastern Massachusetts Univ., North Dartmouth, MA, USA ; Phaneuf, G.

Models for analyzing the PIN diode in switch, attenuator, and limiter applications are presented. A nonlinear forward-bias model is outlined. The resulting nonlinear transfer functions are evaluated out to third order and discussed in terms of distortion intercept points for series- and shunt-mounted PIN diodes. The model is compared with series circuit experimental data. A transient PIN diode model is introduced and used to study the effects of operating frequency and diode geometry on limiting characteristics

Published in:
Circuits and Systems, 1989., IEEE International Symposium on

Date of Conference: 8-11 May 1989

Page(s):
2209 - 2214 vol.3
Meeting Date :
08 May 1989-11 May 1989
INSPEC Accession Number:
3637725
Conference Location :
Portland, OR
Digital Object Identifier :
10.1109/ISCAS.1989.100816
Product Type:
Conference Publications

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