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Low-noise low-power GaAs monolithic amplifiers using D- and E/D-processes

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1 Author(s)
E. Jarvinen ; Telecommun. Lab., Tech. Res. Centre of Finland, Espoo, Finland

A description is given of the design and performance of GaAs monolithic L-band amplifiers with low power consumption. One amplifier has been fabricated using a 1-μm depletion-mode (D-MESFET) process, and the other using 1-μm enhancement/depletion-mode (E/D) technology. Both the amplifiers have over 11-dB gain and a noise figure of 3 dB or less at 1 GHz. The power consumption of the D-MESFET amplifier is below 100 mW and that of the E/D amplifier is below 50 mW. Overall performance of the amplifiers is compared

Published in:

Circuits and Systems, 1989., IEEE International Symposium on

Date of Conference:

8-11 May 1989