Characterization issues of gate geometry in multifinger structure for RF-SOI MOSFETs

In this letter, we propose that f/sub T/ and f/sub max/ properties in partially depleted SOI devices were analyzed in terms of gate electrode layout, body instability, and body resistance of multifinger structure. The speed characteristics were a strong function of the number of fingers and gate types such as T-gate and H-gate structures and were evaluated by g/sub m/ variation (/spl Delta/g/sub m/), extra parasitic capacitance (/spl Delta/C/sub gs/), and ac body instability.