InGaN/GaN light emitting diodes activated in O/sub 2/ ambient

Mg-doped GaN epitaxial layers were annealed in pure O/sub 2/ and pure N/sub 2/. It was found that we could achieve a low-resistive p-type GaN by pure O/sub 2/ annealing at a temperature as low as 400/spl deg/C. With a 500/spl deg/C annealing temperature, it was found that the forward voltage and dynamic resistance of the InGaN/GaN light emitting diode (LED) annealed in pure O/sub 2/ were both smaller than those values observed from InGaN/GaN LED annealed in pure N/sub 2/. It was also found that an incomplete activation of Mg will result in a shorter LED lifetime.