Low-threshold strain-compensated InGaAs(N) (/spl lambda/ = 1.19-1.31 μm) quantum-well lasers

Highly strained (/spl Delta/a/a /spl sim/ 2.5%) In/sub 0.4/Ga/sub 0.6/As and In/sub 0.4/Ga/sub 0.6/As/sub 0.995/N/sub 0.005/-quantum-well (QW) active lasers utilizing strain-compensating InGaP-GaAsP buffer layers and GaAs/sub 0.85/P/sub 0.15/ barrier layers, grown by metal-organic chemical vapor deposition (MOCVD), are demonstrated with lasing emission wavelength of 1.185 and 1.307 μm, respectively. Threshold and transparency current density for the strain compensated InGaAsN QW lasers, with emission wavelength of 1.295 μm, are measured to be as low as 290 A/cm
²
(L = 1500 μm) and 110 A/cm
²
, respectively, with characteristic temperature of T
₀
and T
₁
of 130 K and 400 K.