A planar Bi-Sb multijunction thermal converter with small ac-dc transfer differences

A planar Bi-Sb multijunction thermal converter was fabricated on the LPCVD Si/sub 3/N/sub 4//SiO/sub 2//Si/sub 3/N/sub 4/-diaphragm, prepared by silicon bulk micromachining, which thermally isolated a bifilar Pt- or NiCr-heater and the hot junctions of a Bi-Sb thermopile from the silicon substrate. The voltage responsivity, the ac-dc transfer difference, and the fluctuations of the output thermoelectric voltage and heater resistance were discussed to investigate the design factors of a thermal converter. The respective voltage responsivities in air and in a vacuum of the thermal converter with a built-in NiCr-heater were about 14.0 mV/mW and 54.0 mV/mW. The ac-dc voltage and the current transfer differences in air were about /spl plusmn/0.60 ppm and /spl plusmn/0.11 ppm in the dc reversing frequency range from 10 Hz to 10 kHz. They are sufficiently small to be used as practical ac standards. Compared to the thermal converter with a built-in Pt-heater, the thermal converter with a built-in NiCr-heater demonstrated a higher voltage responsivity and smaller ac-dc transfer differences, while exhibiting slightly larger fluctuations in output thermoelectric voltage and in heater resistance.