CW operation of a InGaAsP/InP gain-coupled distributed feedback laser with a corrugated active layer

A low-threshold continuous-wave (CW)-operable gain-coupled distributed-feedback laser with a corrugated active layer was realized with InGaAsP/InP materials by implementing active ion etching and organometallic vapor-phase epitaxy. Without any phase-shifting structures, the devices exhibited excellent single-longitudinal-mode oscillation, independent of facet reflection. Threshold currents as low as 12 mA and side-mode suppression ratios as high as 55 dB were demonstrated at a wavelength of 1.55 mu m.<
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