A bipolar smart power technology for high voltage applications

A technology is discussed which allows integration of n-p-n and p-n-p transistors with a multistage Darlington output designed for voltages up to U/sub CBO/=600 V. With this technology, circuit functions like temperature-compensated current regulation and internal voltage clamping can be realized. A special MOS voltage clamping can be realized. A special MOS arrangement is employed to accomplish the voltage clamping and to enhance the reliability of the device. A survey of this smart power technology is given, and a demonstration example is shown.<
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