Reverse-biased GaAs- and Si-pnipn structures for semiconductor devices

Research on the properties of reverse-biased pnipn structures with the aim of the creation of new semiconductor devices based on these structures is urgent. The present work is dedicated to this problem. As a mathematical model for the study of reverse-biased pnipn structures, the drift-diffusion model was used, which adequately describes the isothermal processes in semiconductors. The solution of the equations of this model is executed by the finite-difference methods for semiconductor structures with abrupt p-n junctions.