A silicon MOSFET/field emission array fabricated using CMP

Integrated lightly doped drain MOSFET is used to control the electron supply of silicon field emission array resulting in low voltage switching of emission current. The LD-MOSFET/FEA was fabricated using isotropic and anisotropic etch of silicon, oxidation sharpening and chemical mechanical polishing. Current voltage characterization of the LD-MOSFET/FEA demonstrated modulation of electron emission by the MOSFET gate voltage. Numerical simulation studies of the device operation will also be presented.